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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 4.39$ 4.39$
5 - 9 4.17$ 4.17$
10 - 24 4.04$ 4.04$
25 - 49 3.95$ 3.95$
50 - 99 3.86$ 3.86$
100+ 3.65$ 3.65$
Quantity U.P
1 - 4 4.39$ 4.39$
5 - 9 4.17$ 4.17$
10 - 24 4.04$ 4.04$
25 - 49 3.95$ 3.95$
50 - 99 3.86$ 3.86$
100+ 3.65$ 3.65$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V - STP11NM60FP. N-channel transistor, 7A, 11A, 10uA, 0.4 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 230pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 05/06/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 17
STF11NM60ND

STF11NM60ND

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID...
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
4.63$ VAT incl.
(4.63$ excl. VAT)
4.63$
Quantity in stock : 39
STP13NM60N

STP13NM60N

N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (...
STP13NM60N
N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: ID pulse 44A. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STP13NM60N
N-channel transistor, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 44A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: ID pulse 44A. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.45$ VAT incl.
(2.45$ excl. VAT)
2.45$

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