Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.45$ | 2.45$ |
5 - 9 | 2.33$ | 2.33$ |
10 - 24 | 2.21$ | 2.21$ |
25 - 46 | 2.08$ | 2.08$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.45$ | 2.45$ |
5 - 9 | 2.33$ | 2.33$ |
10 - 24 | 2.21$ | 2.21$ |
25 - 46 | 2.08$ | 2.08$ |
STP13NM60N. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. Id(imp): 44A. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 13NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: ID pulse 44A. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.