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Semiconductors Transistors

SPB56N03L

SPB56N03L
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.22$ 1.22$
5 - 9 1.16$ 1.16$
10 - 24 1.10$ 1.10$
25 - 49 1.04$ 1.04$
50 - 99 1.01$ 1.01$
100 - 249 0.99$ 0.99$
250 - 285 0.94$ 0.94$
Quantity U.P
1 - 4 1.22$ 1.22$
5 - 9 1.16$ 1.16$
10 - 24 1.10$ 1.10$
25 - 49 1.04$ 1.04$
50 - 99 1.01$ 1.01$
100 - 249 0.99$ 0.99$
250 - 285 0.94$ 0.94$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 285
Set of 1

SPB56N03L. Channel type: N. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. ID (T=25°C): 56A. Idss (max): 56A. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 12:25.

Equivalent products :

Quantity in stock : 65
NDB6030L

NDB6030L

Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ...
NDB6030L
Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity per case: 1
NDB6030L
Channel type: N. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Quantity per case: 1
Set of 1
1.72$ VAT incl.
(1.72$ excl. VAT)
1.72$
Quantity in stock : 718
CEB6030L

CEB6030L

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement...
CEB6030L
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v
CEB6030L
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v
Set of 1
1.06$ VAT incl.
(1.06$ excl. VAT)
1.06$

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Quantity in stock : 647
MOR2WS-560K

MOR2WS-560K

Resistance: 560k Ohms. Power: 2W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Ope...
MOR2WS-560K
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MOR2WS-560K
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IRF840

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MOR1WS-5K6

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Resistance: 5.6k Ohms. Power: 1W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Ope...
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AP9575AGH

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MOR1WS-560K

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Resistance: 560k Ohms. Power: 1W. Resistor type: Metal layer. Temperature stability: 300ppm/°C. Ser...
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AP9971GH

AP9971GH

C(in): 1700pF. Cost): 160pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity ...
AP9971GH
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R46KI22200001M

R46KI22200001M

Capacity value [F]: 22nF. RoHS: yes. Component family: X2 Class Polypropylene Film Capacitor. Manufa...
R46KI22200001M
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MOF0932JAFT5600

MOF0932JAFT5600

Resistance: 560 Ohms. Power: 1W. Tolerance: 5%. Dimensions: 4.5x11.5mm. Maximum operating voltage: 5...
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CONN-B001-B

CONN-B001-B

Connector type: banana plug. Lenght: 38.7mm. RoHS: yes...
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AOD403

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