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Semiconductors Transistors

SPA11N65C3

SPA11N65C3
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Quantity excl. VAT VAT incl.
1 - 1 5.73$ 5.73$
2 - 2 5.45$ 5.45$
3 - 4 5.16$ 5.16$
Quantity U.P
1 - 1 5.73$ 5.73$
2 - 2 5.45$ 5.45$
3 - 4 5.16$ 5.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4
Set of 1

SPA11N65C3. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: insulated case (2500VAC, 1 min). Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: 11N65C3. Pd (Power Dissipation, Max): 33W. On-resistance Rds On: 0.34 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 324
SPA11N80C3

SPA11N80C3

C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. ...
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. On-resistance Rds On: 0.39 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.58$ VAT incl.
(4.58$ excl. VAT)
4.58$
Quantity in stock : 31
STF18NM60N

STF18NM60N

C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. I...
STF18NM60N
C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
STF18NM60N
C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
Set of 1
3.82$ VAT incl.
(3.82$ excl. VAT)
3.82$

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