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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V - STF18NM60N

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V - STF18NM60N
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 3.82$ 3.82$
5 - 9 3.63$ 3.63$
10 - 24 3.51$ 3.51$
25 - 49 3.44$ 3.44$
50 - 67 3.36$ 3.36$
Quantity U.P
1 - 4 3.82$ 3.82$
5 - 9 3.63$ 3.63$
10 - 24 3.51$ 3.51$
25 - 49 3.44$ 3.44$
50 - 67 3.36$ 3.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 67
Set of 1

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V - STF18NM60N. N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 05/06/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 28
STP20NM60FP

STP20NM60FP

N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ...
STP20NM60FP
N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.025 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FP. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh™ MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
STP20NM60FP
N-channel transistor, 12.6A, 20A, 10uA, 0.025 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.025 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FP. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh™ MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
7.23$ VAT incl.
(7.23$ excl. VAT)
7.23$

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