Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.82$ | 3.82$ |
5 - 9 | 3.63$ | 3.63$ |
10 - 24 | 3.44$ | 3.44$ |
25 - 31 | 3.25$ | 3.25$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.82$ | 3.82$ |
5 - 9 | 3.63$ | 3.63$ |
10 - 24 | 3.44$ | 3.44$ |
25 - 31 | 3.25$ | 3.25$ |
STF18NM60N. C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.
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