FQPF8N80C

Quantity	excl. VAT	VAT incl.
1 - 4	2.39$	2.39$
5 - 9	2.27$	2.27$
10 - 24	2.15$	2.15$
25 - 49	2.03$	2.03$
50 - 99	1.98$	1.98$
100 - 249	1.26$	1.26$
250 - 716	0.48$	0.48$

Quantity	U.P
1 - 4	2.39$	2.39$
5 - 9	2.27$	2.27$
10 - 24	2.15$	2.15$
25 - 49	2.03$	2.03$
50 - 99	1.98$	1.98$
100 - 249	1.26$	1.26$
250 - 716	0.48$	0.48$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 716

Set of 1

FQPF8N80C. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. On-resistance Rds On: 1.29 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no. Quantity in stock updated on 24/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!