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Semiconductors Diodes

SF68G

SF68G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.64$ 0.64$
10 - 24 0.61$ 0.61$
25 - 49 0.58$ 0.58$
50 - 99 0.54$ 0.54$
100 - 249 0.50$ 0.50$
250 - 266 0.49$ 0.49$
Quantity U.P
1 - 9 0.64$ 0.64$
10 - 24 0.61$ 0.61$
25 - 49 0.58$ 0.58$
50 - 99 0.54$ 0.54$
100 - 249 0.50$ 0.50$
250 - 266 0.49$ 0.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 266
Set of 1

SF68G. Cj: 80pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: ultra fast rectifier diode. Forward current (AV): 6A. IFSM: 150A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (9.1x9.1mm). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 150Ap/8.3ms. Quantity in stock updated on 05/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 94
HER608

HER608

Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV...
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$

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Quantity in stock : 9378
1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
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1N5349B

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BY255

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SB3200

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Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Fu...
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P600K

P600K

Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Sem...
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1N4007

1N4007

VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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ZY12

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1N5399

1N5399

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
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FR607

FR607

Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semi...
FR607
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0.42$

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