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Semiconductors Transistors

Q67040-S4624

Q67040-S4624
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[TITLE]
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[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.11$ 5.11$
5 - 9 4.86$ 4.86$
10 - 24 4.60$ 4.60$
25 - 49 4.35$ 4.35$
50 - 99 4.24$ 4.24$
100 - 436 3.99$ 3.99$
Quantity U.P
1 - 4 5.11$ 5.11$
5 - 9 4.86$ 4.86$
10 - 24 4.60$ 4.60$
25 - 49 4.35$ 4.35$
50 - 99 4.24$ 4.24$
100 - 436 3.99$ 3.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 436
Set of 1

Q67040-S4624. C(in): 30pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 21.9A. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. IDss (min): 0.5uA. Marking on the case: 07N65C3. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.54 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 25
STP10NK80Z

STP10NK80Z

C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 645...
STP10NK80Z
C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK80Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener diode protection. G-S Protection: yes
STP10NK80Z
C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK80Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener diode protection. G-S Protection: yes
Set of 1
3.28$ VAT incl.
(3.28$ excl. VAT)
3.28$

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