STP10NK80Z

STP10NK80Z. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK80Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener diode protection. G-S Protection: yes. Quantity in stock updated on 26/12/2024, 01:25.