PNP bipolar transistors

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. Function: 1.6mm. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 100nA (ICBO), SO, SM-8. Collector current: 100nA (ICBO). Housing: SO. Housing (according to data sheet): SM-8. Quantity per case: 2. Voltage: 60V. Max hFE gain: 100 (500mA, 2V). Number of terminals: 8. Max: 140 MHz. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 2.75W. Type of transistor: PNP & PNP. Operating temperature: -55°C ~ 150°C. Saturation voltage VCE(sat): 500mV (200mA, 2A)

NPN-Transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX451. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 100V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 100V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: Very low saturation VBE(sat) 0.9V. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Spec info: complementary transistor (pair) ZTX653. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 600 ns. Tf(min): 40 ns. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.17V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 400V, 0.5A. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.5A. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: ZTX758. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 2A, TO-92, TO-92, 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.9V. Max hFE gain: 800. Minimum hFE gain: 150. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Spec info: complementary transistor (pair) ZTX690. Assembly/installation: PCB through-hole mounting. Tf(max): 600 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 70V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.95V. Max hFE gain: 800. Minimum hFE gain: 300. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 750 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.45V. Vebo: 5V