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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C

NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.66$ 0.66$
25 - 49 0.63$ 0.63$
50 - 95 0.61$ 0.61$
Quantity U.P
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.66$ 0.66$
25 - 49 0.63$ 0.63$
50 - 95 0.61$ 0.61$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 95
Set of 1

NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C. NPN-Transistor, 3A, TO-220, TO-220, 115V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP31C. BE diode: no. CE diode: no. Quantity in stock updated on 16/04/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 74
BD242C

BD242C

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according...
BD242C
NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD241C. BE diode: no. CE diode: no
BD242C
NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD241C. BE diode: no. CE diode: no
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$

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