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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 1.5A, TO-92, TO-92, 25V - SS8550

NPN-Transistor, 1.5A, TO-92, TO-92, 25V - SS8550
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.25$ 0.25$
10 - 24 0.24$ 0.24$
25 - 49 0.23$ 0.23$
50 - 99 0.22$ 0.22$
100 - 249 0.18$ 0.18$
250 - 499 0.17$ 0.17$
500 - 502 0.16$ 0.16$
Quantity U.P
1 - 9 0.25$ 0.25$
10 - 24 0.24$ 0.24$
25 - 49 0.23$ 0.23$
50 - 99 0.22$ 0.22$
100 - 249 0.18$ 0.18$
250 - 499 0.17$ 0.17$
500 - 502 0.16$ 0.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 502
Set of 1

NPN-Transistor, 1.5A, TO-92, TO-92, 25V - SS8550. NPN-Transistor, 1.5A, TO-92, TO-92, 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V. Quantity in stock updated on 07/05/2025, 23:25.

Equivalent products :

Quantity in stock : 3
2SB892

2SB892

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 2A. Housing: TO-92. Housing (acco...
2SB892
NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 560. Minimum hFE gain: 100. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) 2SD1207. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V
2SB892
NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 560. Minimum hFE gain: 100. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) 2SD1207. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V
Set of 1
3.29$ VAT incl.
(3.29$ excl. VAT)
3.29$

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2SD1207

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