Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.16$ | 6.16$ |
2 - 2 | 5.85$ | 5.85$ |
3 - 4 | 5.67$ | 5.67$ |
5 - 9 | 5.55$ | 5.55$ |
10 - 19 | 5.42$ | 5.42$ |
20 - 29 | 5.24$ | 5.24$ |
30 - 47 | 5.05$ | 5.05$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.16$ | 6.16$ |
2 - 2 | 5.85$ | 5.85$ |
3 - 4 | 5.67$ | 5.67$ |
5 - 9 | 5.55$ | 5.55$ |
10 - 19 | 5.42$ | 5.42$ |
20 - 29 | 5.24$ | 5.24$ |
30 - 47 | 5.05$ | 5.05$ |
N-channel transistor, 30A, TO-247, TO-247AC, 600V - STGW20NC60VD. N-channel transistor, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. C(in): 2200pF. Cost): 225pF. CE diode: yes. Channel type: N. Trr Diode (Min.): 44 ns. Function: high frequency inverters, UPS. Germanium diode: no. Collector current: 60A. Ic(pulse): 150A. Marking on the case: GW20NC60VD. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Very Fast PowerMESH™ IGBT. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 31 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 04/06/2025, 04:25.
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