2SD1207

Quantity	excl. VAT	VAT incl.
1 - 4	0.89$	0.89$
5 - 9	0.85$	0.85$
10 - 23	0.80$	0.80$

Quantity	U.P
1 - 4	0.89$	0.89$
5 - 9	0.85$	0.85$
10 - 23	0.80$	0.80$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 23

Set of 1

2SD1207. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 2A. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Silicon Darlington Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Spec info: complementary transistor (pair) 2SB892. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!