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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 8A, TO-220, 160V - BDX54F

NPN-Transistor, 8A, TO-220, 160V - BDX54F
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.06$ 2.06$
5 - 5 1.96$ 1.96$
Quantity U.P
1 - 4 2.06$ 2.06$
5 - 5 1.96$ 1.96$
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Quantity in stock : 5
Set of 1

NPN-Transistor, 8A, TO-220, 160V - BDX54F. NPN-Transistor, 8A, TO-220, 160V. Collector current: 8A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. BE diode: no. BE resistor: R1 typ. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Complementary power Darlington transistors. Minimum hFE gain: 750. Ic(pulse): 12A. Pd (Power Dissipation, Max): 60W. Spec info: complementary transistor (pair) BDX53F. Type of transistor: PNP. Vcbo: 160V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 08/05/2025, 16:25.

Equivalent products :

Quantity in stock : 609
BDX54C

BDX54C

NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (accordin...
BDX54C
NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Resistor B: Darlington Power Transistor. BE diode: no. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: audio amplifier. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX53C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V
BDX54C
NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Resistor B: Darlington Power Transistor. BE diode: no. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: audio amplifier. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX53C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V
Set of 1
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$

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BDX54F

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