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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, TO-92, 20V, 1A, TO-92 - BC369

NPN-Transistor, TO-92, 20V, 1A, TO-92 - BC369
[TITLE]
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.61$ 1.61$
2 - 2 1.53$ 1.53$
3 - 4 1.45$ 1.45$
5 - 9 1.42$ 1.42$
10 - 21 1.37$ 1.37$
Quantity (Set of 10) U.P
1 - 1 1.61$ 1.61$
2 - 2 1.53$ 1.53$
3 - 4 1.45$ 1.45$
5 - 9 1.42$ 1.42$
10 - 21 1.37$ 1.37$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 203
Set of 10

NPN-Transistor, TO-92, 20V, 1A, TO-92 - BC369. NPN-Transistor, TO-92, 20V, 1A, TO-92. Housing: TO-92. Collector/emitter voltage Vceo: 20V. Collector current: 1A. Housing (according to data sheet): TO-92. Type of transistor: PNP. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 27/07/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 1623
BC640

BC640

NPN-Transistor, TO-92, TO-92 (Ammo), 100V, 1A. Housing: TO-92. Housing (according to data sheet): TO...
BC640
NPN-Transistor, TO-92, TO-92 (Ammo), 100V, 1A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo). Collector/emitter voltage Vceo: 100V. Collector current: 1A. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Vcbo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 160. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.8W
BC640
NPN-Transistor, TO-92, TO-92 (Ammo), 100V, 1A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo). Collector/emitter voltage Vceo: 100V. Collector current: 1A. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Vcbo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 160. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.8W
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 1210
BC636

BC636

NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to ...
BC636
NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 110pF. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
BC636
NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 110pF. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 10
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$

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BC337-25

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BC637

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