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BC369

BC369
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[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.46$ 0.46$
2 - 2 0.44$ 0.44$
3 - 4 0.42$ 0.42$
5 - 9 0.40$ 0.40$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 232 0.33$ 0.33$
Quantity (Set of 10) U.P
1 - 1 0.46$ 0.46$
2 - 2 0.44$ 0.44$
3 - 4 0.42$ 0.42$
5 - 9 0.40$ 0.40$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 232 0.33$ 0.33$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2317
Set of 10

BC369. RoHS: no. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC369. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 1.5A. Cutoff frequency ft [MHz]: 45 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Type of transistor: PNP. Collector/emitter voltage Vceo: 20V. Quantity in stock updated on 25/12/2024, 17:25.

Equivalent products :

Quantity in stock : 2746
BC640

BC640

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TR...
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
Set of 1
0.19$ VAT incl.
(0.19$ excl. VAT)
0.19$
Quantity in stock : 1240
BC636

BC636

C(in): 110pF. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Product...
BC636
C(in): 110pF. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
BC636
C(in): 110pF. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no
Set of 10
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$

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BC637

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