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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.7A, 9A, 9A, 0.8 Ohms, TO-220, TO-220, 600V - STP9NB60

N-channel transistor, 5.7A, 9A, 9A, 0.8 Ohms, TO-220, TO-220, 600V - STP9NB60
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 7.19$ 7.19$
2 - 2 6.83$ 6.83$
3 - 3 6.47$ 6.47$
Quantity U.P
1 - 1 7.19$ 7.19$
2 - 2 6.83$ 6.83$
3 - 3 6.47$ 6.47$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3
Set of 1

N-channel transistor, 5.7A, 9A, 9A, 0.8 Ohms, TO-220, TO-220, 600V - STP9NB60. N-channel transistor, 5.7A, 9A, 9A, 0.8 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Quantity per case: 1. Quantity in stock updated on 16/04/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 130
IRFB9N60A

IRFB9N60A

N-channel transistor, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID ...
IRFB9N60A
N-channel transistor, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 180pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 37A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: High-speed switching. G-S Protection: no
IRFB9N60A
N-channel transistor, 5.8A, 9.2A, 250uA, 0.75 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. On-resistance Rds On: 0.75 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 180pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 37A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: High-speed switching. G-S Protection: no
Set of 1
3.72$ VAT incl.
(3.72$ excl. VAT)
3.72$

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