IRFB9N60A

Quantity	excl. VAT	VAT incl.
1 - 4	3.72$	3.72$
5 - 9	3.53$	3.53$
10 - 24	3.35$	3.35$
25 - 49	3.16$	3.16$
50 - 99	3.09$	3.09$
100 - 132	3.01$	3.01$

Quantity	U.P
1 - 4	3.72$	3.72$
5 - 9	3.53$	3.53$
10 - 24	3.35$	3.35$
25 - 49	3.16$	3.16$
50 - 99	3.09$	3.09$
100 - 132	3.01$	3.01$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 132

Set of 1

IRFB9N60A. C(in): 1400pF. Cost): 180pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 37A. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.75 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: High-speed switching. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.

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Delivery in 2-3 days, with postal tracking!