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N-channel transistor, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V - STP55NE06

N-channel transistor, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V - STP55NE06
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Quantity in stock : 2
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N-channel transistor, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V - STP55NE06. N-channel transistor, 39A, 55A, 10uA, 0.019 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 10uA. On-resistance Rds On: 0.019 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 3050pF. Cost): 380pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 220A. IDss (min): 1uA. Marking on the case: P55NE06. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: power MOSFET transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 11/05/2025, 13:25.

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Quantity in stock : 141
STP55NF06

STP55NF06

N-channel transistor, 35A, 50A, 10uA, 0.015 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35A. ID (T=25�...
STP55NF06
N-channel transistor, 35A, 50A, 10uA, 0.015 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.015 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 1uA. Marking on the case: P55NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STP55NF06
N-channel transistor, 35A, 50A, 10uA, 0.015 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. On-resistance Rds On: 0.015 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1300pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 1uA. Marking on the case: P55NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$
Quantity in stock : 45
STP65NF06

STP65NF06

N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25...
STP65NF06
N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Marking on the case: P65NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STP65NF06
N-channel transistor, 42A, 60A, 10uA, 0.0115 Ohms, TO-220, TO-220, 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.0115 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 240A. IDss (min): 1uA. Marking on the case: P65NF06. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$

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