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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 4.20$ 4.20$
5 - 9 3.99$ 3.99$
10 - 24 3.78$ 3.78$
25 - 49 3.57$ 3.57$
50 - 99 3.48$ 3.48$
100 - 249 3.40$ 3.40$
250+ 3.27$ 3.27$
Quantity U.P
1 - 4 4.20$ 4.20$
5 - 9 3.99$ 3.99$
10 - 24 3.78$ 3.78$
25 - 49 3.57$ 3.57$
50 - 99 3.48$ 3.48$
100 - 249 3.40$ 3.40$
250+ 3.27$ 3.27$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V - SPP11N60C3. N-channel transistor, 7A, 11A, 100uA, 0.34 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.34 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 1200pF. Cost): 390pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 33A. IDss (min): 0.1uA. Marking on the case: 11N60C3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 10 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 11
FCP11N60

FCP11N60

N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C...
FCP11N60
N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
FCP11N60
N-channel transistor, 7A, 11A, 10uA, 0.32 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.32 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
Set of 1
4.02$ VAT incl.
(4.02$ excl. VAT)
4.02$

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