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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v - SPB56N03L

N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v - SPB56N03L
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.22$ 1.22$
5 - 9 1.16$ 1.16$
10 - 24 1.12$ 1.12$
25 - 49 1.10$ 1.10$
50 - 99 1.07$ 1.07$
100 - 249 1.04$ 1.04$
250 - 285 1.00$ 1.00$
Quantity U.P
1 - 4 1.22$ 1.22$
5 - 9 1.16$ 1.16$
10 - 24 1.12$ 1.12$
25 - 49 1.10$ 1.10$
50 - 99 1.07$ 1.07$
100 - 249 1.04$ 1.04$
250 - 285 1.00$ 1.00$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 285
Set of 1

N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v - SPB56N03L. N-channel transistor, 56A, 56A, D2PAK ( TO-263 ), TO-263 ( D2PAK ), 30 v. ID (T=25°C): 56A. Idss (max): 56A. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Marking on the case: 56N03L. Pd (Power Dissipation, Max): 120W. Assembly/installation: surface-mounted component (SMD). Technology: SIPMOS Power Transistor. Original product from manufacturer Siemens. Quantity in stock updated on 08/06/2025, 00:25.

Equivalent products :

Quantity in stock : 65
NDB6030L

NDB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): ...
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
NDB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
Set of 1
1.72$ VAT incl.
(1.72$ excl. VAT)
1.72$
Quantity in stock : 718
CEB6030L

CEB6030L

N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): ...
CEB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
CEB6030L
N-channel transistor, 52A, 52A, 0.011 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 30 v. ID (T=25°C): 52A. Idss (max): 52A. On-resistance Rds On: 0.011 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET
Set of 1
1.06$ VAT incl.
(1.06$ excl. VAT)
1.06$

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