N-channel transistor IRFB4227, 46A, 65A, 1mA, 19.7m Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. On-resistance Rds On: 19.7m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Assembly/installation: PCB through-hole mounting. C(in): 4600pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 460pF. Drain-source protection: yes. Function: PDP Switch. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 20uA. Id(imp): 260A. Number of terminals: 3. Operating temperature: -40...+175°C. Pd (Power Dissipation, Max): 330W. Quantity per case: 1. RoHS: yes. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14