N-channel transistor IRF830, TO-220, 2.9A, 4.5A, 250uA, 1.5 Ohms, TO-220AB, 500V. Housing: TO-220. ID (T=100°C): 2.9A. ID (T=25°C): 4.5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 610pF. Channel type: N. Charge: 38nC. Conditioning: tubus. Cost): 160pF. Drain current: 4.5A, 2.9A. Drain-source protection: diode. Drain-source voltage: 500V. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 18A. Number of terminals: 3. On-state resistance: 1.5 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 74W. Polarity: unipolar. Power: 74W. Quantity per case: 1. RoHS: yes. Td(off): 42 ns. Td(on): 8.2 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 320 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27