N-channel transistor IRF530, TO-220, 10A, 14A, 250uA, 0.16 Ohms, TO-220AB, 100V. Housing: TO-220. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 670pF. Channel type: N. Charge: 26nC. Conditioning unit: 50. Conditioning: tubus. Cost): 250pF. Drain current: 10A, 16A. Drain-source protection: yes. Drain-source voltage: 100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. IDss (min): 25uA. Id(imp): 56A. Number of terminals: 3. On-state resistance: 0.16 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 88W. Polarity: unipolar. Power: 88W. Quantity per case: 1. RoHS: yes. Spec info: Dynamic dv/dt Rating. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:27