N-channel transistor IRFBC30, 2.3A, 3.6A, 500uA, 2.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. On-resistance Rds On: 2.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 660pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 86pF. Drain-source protection: yes. Function: Dynamic dv/dt Rating. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 100uA. Id(imp): 14A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 11/06/2025, 22:14