Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.36$ | 2.36$ |
5 - 9 | 2.24$ | 2.24$ |
10 - 24 | 2.12$ | 2.12$ |
25 - 49 | 2.00$ | 2.00$ |
50 - 99 | 1.96$ | 1.96$ |
100 - 249 | 1.91$ | 1.91$ |
250+ | 1.82$ | 1.82$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.36$ | 2.36$ |
5 - 9 | 2.24$ | 2.24$ |
10 - 24 | 2.12$ | 2.12$ |
25 - 49 | 2.00$ | 2.00$ |
50 - 99 | 1.96$ | 1.96$ |
100 - 249 | 1.91$ | 1.91$ |
250+ | 1.82$ | 1.82$ |
N-channel transistor, 2A, 4A, 50uA, 3 Ohms, 800V - STP4NB80. N-channel transistor, 2A, 4A, 50uA, 3 Ohms, 800V. ID (T=100°C): 2A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 800V. C(in): 700pF. Cost): 95pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 16A. IDss (min): 1uA. Pd (Power Dissipation, Max): 100W. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 16/04/2025, 12:25.
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