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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 10A, 250uA, 0.58 Ohms, TO-220FP, TO-220F, 600V - 2SK3502-01MR

N-channel transistor, 10A, 250uA, 0.58 Ohms, TO-220FP, TO-220F, 600V - 2SK3502-01MR
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Quantity excl. VAT VAT incl.
1 - 1 12.76$ 12.76$
Quantity U.P
1 - 1 12.76$ 12.76$
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Quantity in stock : 1
Set of 1

N-channel transistor, 10A, 250uA, 0.58 Ohms, TO-220FP, TO-220F, 600V - 2SK3502-01MR. N-channel transistor, 10A, 250uA, 0.58 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1200pF. Cost): 140pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 0.75us. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 40A. IDss (min): 25uA. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 17 ns. Technology: Super FAP-G Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Note: Panasonic--B1CERR000022. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 16/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 17
STF11NM60ND

STF11NM60ND

N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID...
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
STF11NM60ND
N-channel transistor, 6.3A, 10A, 100uA, 0.37 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. On-resistance Rds On: 0.37 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
Set of 1
4.63$ VAT incl.
(4.63$ excl. VAT)
4.63$
Quantity in stock : 69
STF18NM60N

STF18NM60N

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID ...
STF18NM60N
N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
STF18NM60N
N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. Drain-source protection : yes. G-S Protection: no
Set of 1
3.82$ VAT incl.
(3.82$ excl. VAT)
3.82$

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