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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 7.87$ 7.87$
2 - 2 7.48$ 7.48$
3 - 4 7.24$ 7.24$
5 - 9 7.08$ 7.08$
10 - 19 6.93$ 6.93$
20 - 29 6.69$ 6.69$
30 - 42 6.45$ 6.45$
Quantity U.P
1 - 1 7.87$ 7.87$
2 - 2 7.48$ 7.48$
3 - 4 7.24$ 7.24$
5 - 9 7.08$ 7.08$
10 - 19 6.93$ 6.93$
20 - 29 6.69$ 6.69$
30 - 42 6.45$ 6.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 42
Set of 1

N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V - 2SK3176. N-channel transistor, n/a, 30A, 100uA, 38m Ohms, TO-3PN ( 2-16C1B ), 2-16C1B, 200V. ID (T=100°C): n/a. ID (T=25°C): 30A. Idss (max): 100uA. On-resistance Rds On: 38m Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 200V. C(in): 5400pF. Cost): 1900pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: Switching mode Regulator, DC-DC Converter, Motor Driver. G-S Protection: yes. Id(imp): 60.4k Ohms. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 190 ns. Td(on): 55 ns. Technology: Field Effect Transistor MOS-V. Operating temperature: -...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V. Original product from manufacturer Toshiba. Quantity in stock updated on 04/06/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 141
IRFP250N

IRFP250N

N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T...
IRFP250N
N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFP250N
N-channel transistor, 21A, 30A, 250uA, 0.075 Ohms, TO-247, TO-247AC, 200V. ID (T=100°C): 21A. ID (T=25°C): 30A. Idss (max): 250uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 200V. C(in): 2159pF. Cost): 315pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 186 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
4.12$ VAT incl.
(4.12$ excl. VAT)
4.12$

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