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Semiconductors Transistors

IRL640A

IRL640A
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.27$ 1.27$
5 - 9 1.21$ 1.21$
10 - 24 1.15$ 1.15$
25 - 49 1.08$ 1.08$
50 - 81 1.06$ 1.06$
Quantity U.P
1 - 4 1.27$ 1.27$
5 - 9 1.21$ 1.21$
10 - 24 1.15$ 1.15$
25 - 49 1.08$ 1.08$
50 - 81 1.06$ 1.06$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 81
Set of 1

IRL640A. Channel type: N. On-resistance Rds On: 0.18 Ohms. Housing: TO-220. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic-Level. ID (T=25°C): 18A. Idss (max): 18A. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Quantity in stock updated on 15/01/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 36
IRL640

IRL640

C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
IRL640
C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 68A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. G-S Protection: no
IRL640
C(in): 1800pF. Cost): 480pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 310 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 68A. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. G-S Protection: no
Set of 1
2.02$ VAT incl.
(2.02$ excl. VAT)
2.02$

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Quantity in stock : 269
IRF640N

IRF640N

C(in): 1160pF. Cost): 185pF. Channel type: N. Trr Diode (Min.): 167 ns. Type of transistor: MOSFET. ...
IRF640N
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Quantity in stock : 112
IRFBE30

IRFBE30

C(in): 1300pF. Cost): 310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type o...
IRFBE30
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