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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V - FQP7N80

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V - FQP7N80
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 4.84$ 4.84$
5 - 9 4.59$ 4.59$
10 - 24 4.35$ 4.35$
25 - 49 4.11$ 4.11$
50 - 99 4.01$ 4.01$
100 - 104 3.77$ 3.77$
Quantity U.P
1 - 4 4.84$ 4.84$
5 - 9 4.59$ 4.59$
10 - 24 4.35$ 4.35$
25 - 49 4.11$ 4.11$
50 - 99 4.01$ 4.01$
100 - 104 3.77$ 3.77$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 104
Set of 1

N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V - FQP7N80. N-channel transistor, 4.2A, 6.6A, 100uA, 1.2 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1420pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26.4A. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 63
FQP7N80C

FQP7N80C

N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T...
FQP7N80C
N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Id(imp): 26.4A. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no
FQP7N80C
N-channel transistor, 4.2A, 6.6A, 100uA, 1.57 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. On-resistance Rds On: 1.57 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1290pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Id(imp): 26.4A. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 27nC, Low Crss 10pF. G-S Protection: no
Set of 1
2.65$ VAT incl.
(2.65$ excl. VAT)
2.65$

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