Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.84$ | 4.84$ |
5 - 9 | 4.59$ | 4.59$ |
10 - 24 | 4.35$ | 4.35$ |
25 - 49 | 4.11$ | 4.11$ |
50 - 99 | 4.01$ | 4.01$ |
100 - 104 | 3.77$ | 3.77$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.84$ | 4.84$ |
5 - 9 | 4.59$ | 4.59$ |
10 - 24 | 4.35$ | 4.35$ |
25 - 49 | 4.11$ | 4.11$ |
50 - 99 | 4.01$ | 4.01$ |
100 - 104 | 3.77$ | 3.77$ |
FQP7N80. C(in): 1420pF. Cost): 150pF. Channel type: N. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26.4A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 167W. On-resistance Rds On: 1.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 35 ns. Technology: DMOS, QFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.
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