FQPF7N80C

Quantity	excl. VAT	VAT incl.
1 - 4	5.44$	5.44$
5 - 9	5.17$	5.17$
10 - 24	4.89$	4.89$
25 - 49	4.62$	4.62$
50 - 72	4.51$	4.51$

Quantity	U.P
1 - 4	5.44$	5.44$
5 - 9	5.17$	5.17$
10 - 24	4.89$	4.89$
25 - 49	4.62$	4.62$
50 - 72	4.51$	4.51$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 72

Set of 1

FQPF7N80C. C(in): 1290pF. Cost): 120pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26.4A. ID (T=100°C): 4.2A. ID (T=25°C): 6.6A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 56W. On-resistance Rds On: 1.57 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 35 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Low gate charge (typical 40nC), Low Crss 10pF. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!