2SB1123T

Quantity	excl. VAT	VAT incl.
1 - 4	1.19$	1.19$
5 - 9	1.13$	1.13$
10 - 24	1.07$	1.07$
25 - 49	1.01$	1.01$
50 - 99	0.99$	0.99$
100 - 176	0.96$	0.96$

Quantity	U.P
1 - 4	1.19$	1.19$
5 - 9	1.13$	1.13$
10 - 24	1.07$	1.07$
25 - 49	1.01$	1.01$
50 - 99	0.99$	0.99$
100 - 176	0.96$	0.96$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 176

Set of 1

2SB1123T. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 2A. Note: screen printing/SMD code BF. Marking on the case: BF. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Spec info: complementary transistor (pair) 2SD1623T. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 71

2SA1213Y

Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. ...

Set of 1

0.68$ VAT incl.
(0.68$ excl. VAT)

0.68$