Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.07$ | 1.07$ |
2 - 2 | 1.02$ | 1.02$ |
3 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 11 | 0.85$ | 0.85$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.07$ | 1.07$ |
2 - 2 | 1.02$ | 1.02$ |
3 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.91$ | 0.91$ |
10 - 11 | 0.85$ | 0.85$ |
BC635. C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 05:25.
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