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BC639-16

BC639-16
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.28$ 0.28$
10 - 24 0.27$ 0.27$
25 - 49 0.25$ 0.25$
50 - 99 0.24$ 0.24$
100 - 249 0.22$ 0.22$
250 - 382 0.19$ 0.19$
Quantity U.P
1 - 9 0.28$ 0.28$
10 - 24 0.27$ 0.27$
25 - 49 0.25$ 0.25$
50 - 99 0.24$ 0.24$
100 - 249 0.22$ 0.22$
250 - 382 0.19$ 0.19$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 382
Set of 1

BC639-16. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

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