Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.28$ | 0.28$ |
10 - 24 | 0.27$ | 0.27$ |
25 - 49 | 0.25$ | 0.25$ |
50 - 99 | 0.24$ | 0.24$ |
100 - 249 | 0.22$ | 0.22$ |
250 - 382 | 0.19$ | 0.19$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.28$ | 0.28$ |
10 - 24 | 0.27$ | 0.27$ |
25 - 49 | 0.25$ | 0.25$ |
50 - 99 | 0.24$ | 0.24$ |
100 - 249 | 0.22$ | 0.22$ |
250 - 382 | 0.19$ | 0.19$ |
BC639-16. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.
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