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BC636

BC636
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.93$ 0.93$
2 - 2 0.88$ 0.88$
3 - 4 0.83$ 0.83$
5 - 9 0.79$ 0.79$
10 - 24 0.74$ 0.74$
25 - 49 0.70$ 0.70$
50 - 124 0.65$ 0.65$
Quantity (Set of 10) U.P
1 - 1 0.93$ 0.93$
2 - 2 0.88$ 0.88$
3 - 4 0.83$ 0.83$
5 - 9 0.79$ 0.79$
10 - 24 0.74$ 0.74$
25 - 49 0.70$ 0.70$
50 - 124 0.65$ 0.65$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1240
Set of 10

BC636. C(in): 110pF. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 05:25.

Equivalent products :

Quantity in stock : 2746
BC640

BC640

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TR...
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
Set of 1
0.19$ VAT incl.
(0.19$ excl. VAT)
0.19$

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BC639

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BC639-16

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Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max ...
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2SC1845

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Z0405NF

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KSC945-G

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Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Colle...
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BC557B

BC557B

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: ...
BC557B
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