Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.93$ | 0.93$ |
2 - 2 | 0.88$ | 0.88$ |
3 - 4 | 0.83$ | 0.83$ |
5 - 9 | 0.79$ | 0.79$ |
10 - 24 | 0.74$ | 0.74$ |
25 - 49 | 0.70$ | 0.70$ |
50 - 124 | 0.65$ | 0.65$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.93$ | 0.93$ |
2 - 2 | 0.88$ | 0.88$ |
3 - 4 | 0.83$ | 0.83$ |
5 - 9 | 0.79$ | 0.79$ |
10 - 24 | 0.74$ | 0.74$ |
25 - 49 | 0.70$ | 0.70$ |
50 - 124 | 0.65$ | 0.65$ |
BC636. C(in): 110pF. Cost): 9pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Production date: 1997.04. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 05:25.
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