Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.37$ | 0.37$ |
10 - 24 | 0.36$ | 0.36$ |
25 - 49 | 0.34$ | 0.34$ |
50 - 99 | 0.32$ | 0.32$ |
100 - 249 | 0.31$ | 0.31$ |
250 - 499 | 0.30$ | 0.30$ |
500 - 5282 | 0.29$ | 0.29$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.37$ | 0.37$ |
10 - 24 | 0.36$ | 0.36$ |
25 - 49 | 0.34$ | 0.34$ |
50 - 99 | 0.32$ | 0.32$ |
100 - 249 | 0.31$ | 0.31$ |
250 - 499 | 0.30$ | 0.30$ |
500 - 5282 | 0.29$ | 0.29$ |
RGP02-20E. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 0.5A. IFSM: 20A. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.8V. Forward voltage Vf (min): 1.8V. VRRM: 2000V. Spec info: IFSM--20Ap t=8.3mS. Quantity in stock updated on 26/12/2024, 03:25.
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