Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.72$ | 0.72$ |
5 - 9 | 0.69$ | 0.69$ |
10 - 24 | 0.65$ | 0.65$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 55 | 0.60$ | 0.60$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.72$ | 0.72$ |
5 - 9 | 0.69$ | 0.69$ |
10 - 24 | 0.65$ | 0.65$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 55 | 0.60$ | 0.60$ |
B600C3000W. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: 0. Forward current (AV): 3A. IFSM: 50A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: BR306, KBPC106. Dimensions of connections: diameter 0.9mm. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Quantity in stock updated on 24/12/2024, 16:25.
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