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Electronic components and equipment, for businesses and individuals

RGP20D

RGP20D
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.63$ 0.63$
10 - 24 0.60$ 0.60$
25 - 28 0.57$ 0.57$
Quantity U.P
1 - 9 0.63$ 0.63$
10 - 24 0.60$ 0.60$
25 - 28 0.57$ 0.57$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 28
Set of 1

RGP20D. Semiconductor material: silicon. Forward current (AV): 2A. Note: Ifsm--80A/8.2ms. Pitch: 9.5x5.3mm. VRRM: 200V. Note: GI, S. Quantity in stock updated on 26/12/2024, 04:25.

Equivalent products :

Quantity in stock : 221
BYV28-200

BYV28-200

Cj: 190pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: sil...
BYV28-200
Cj: 190pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. Forward current (AV): 3.5A. IFSM: 90A. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: Ifsm--90A, t=10mS
BYV28-200
Cj: 190pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. Forward current (AV): 3.5A. IFSM: 90A. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: Ifsm--90A, t=10mS
Set of 1
1.56$ VAT incl.
(1.56$ excl. VAT)
1.56$

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Quantity in stock : 241
SB3200

SB3200

Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Fu...
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Quantity in stock : 90
BYV28-600

BYV28-600

Cj: 125pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: sil...
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1N5711

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Cj: 2pF. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: VHF/UHF detectio...
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SGW30N60HS

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Quantity in stock : 90
BYV26C

BYV26C

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: sili...
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Quantity in stock : 67
BY448

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Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor mate...
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MUR160

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Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forwa...
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1N5822

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RoHS: yes. Component family: Schottky rectifier diode. Housing: PCB soldering. Housing: DO-201. Hous...
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Quantity in stock : 4939
BAT41

BAT41

RoHS: yes. Component family: Small-signal Schottky diode. Housing: PCB soldering. Housing: DO-35. Ho...
BAT41
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Quantity in stock : 42
BYV29-500

BYV29-500

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
BYV29-500
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