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2SK2632LS

2SK2632LS
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Quantity excl. VAT VAT incl.
1 - 4 4.19$ 4.19$
Quantity U.P
1 - 4 4.19$ 4.19$
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Quantity in stock : 4
Set of 1

2SK2632LS. C(in): 550pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching Applications. ID (T=100°C): 1.3A. ID (T=25°C): 2.5A. Idss (max): 1mV. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.6 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: V-MOS (F). Housing: TO-220FP. Housing (according to data sheet): TO-220FI-LS. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 5.5V. Gate/source voltage (off) min.: 3.5V. Drain-source protection : yes. Germanium diode: no. Quantity in stock updated on 06/01/2025, 10:25.

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Quantity in stock : 81
STP4NB80FP

STP4NB80FP

C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case...
STP4NB80FP
C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 3 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no
STP4NB80FP
C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 3 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$
Quantity in stock : 2
2SK2129

2SK2129

C(in): 730pF. Cost): 90pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Functi...
2SK2129
C(in): 730pF. Cost): 90pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching--tf = 50ns. Id(imp): 6A. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 0.1mA. Marking on the case: K2129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 35 ns. Technology: Power F-MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no
2SK2129
C(in): 730pF. Cost): 90pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching--tf = 50ns. Id(imp): 6A. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 0.1mA. Marking on the case: K2129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 35 ns. Technology: Power F-MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no
Set of 1
2.14$ VAT incl.
(2.14$ excl. VAT)
2.14$

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2SK2632LS

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C(in): 550pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Funct...
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