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2SK2129

2SK2129
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 2 2.14$ 2.14$
Quantity U.P
1 - 2 2.14$ 2.14$
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Quantity in stock : 2
Set of 1

2SK2129. C(in): 730pF. Cost): 90pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High-speed switching--tf = 50ns. Id(imp): 6A. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 0.1mA. Marking on the case: K2129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 3.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 35 ns. Technology: Power F-MOS FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2V. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 04/01/2025, 10:25.

Equivalent products :

Quantity in stock : 1
2SK2043

2SK2043

C(in): 400pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of ...
2SK2043
C(in): 400pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. Id(imp): 8A. ID (T=100°C): 1A. ID (T=25°C): 2A. Idss (max): 1mA. Marking on the case: K2043. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 10 ns. Technology: silicon MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 4 v. Gate/source voltage (off) min.: 2V. Drain-source protection : yes. G-S Protection: no
2SK2043
C(in): 400pF. Cost): 55pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. Id(imp): 8A. ID (T=100°C): 1A. ID (T=25°C): 2A. Idss (max): 1mA. Marking on the case: K2043. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.2 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 10 ns. Technology: silicon MOSFET transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 4 v. Gate/source voltage (off) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
5.00$ VAT incl.
(5.00$ excl. VAT)
5.00$

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