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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 10A, 600V - 2SC5129-PMC

NPN transistor, 10A, 600V - 2SC5129-PMC
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.34$ 2.34$
5 - 9 2.23$ 2.23$
10 - 18 2.16$ 2.16$
Quantity U.P
1 - 4 2.34$ 2.34$
5 - 9 2.23$ 2.23$
10 - 18 2.16$ 2.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

NPN transistor, 10A, 600V - 2SC5129-PMC. NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Original product from manufacturer Pmc. Quantity in stock updated on 07/06/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 106
2SC5129

2SC5129

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3P...
2SC5129
NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: fall time 0.15..03us (64kHz). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V
2SC5129
NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: fall time 0.15..03us (64kHz). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V
Set of 1
2.65$ VAT incl.
(2.65$ excl. VAT)
2.65$

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