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Semiconductors Transistors

2N3055-PMC

2N3055-PMC
Quantity excl. VAT VAT incl.
1 - 4 2.08$ 2.08$
5 - 9 1.98$ 1.98$
10 - 24 1.88$ 1.88$
25 - 49 1.77$ 1.77$
50 - 52 1.73$ 1.73$
Quantity U.P
1 - 4 2.08$ 2.08$
5 - 9 1.98$ 1.98$
10 - 24 1.88$ 1.88$
25 - 49 1.77$ 1.77$
50 - 52 1.73$ 1.73$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 52
Set of 1

2N3055-PMC. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 15:25.

Equivalent products :

Quantity in stock : 50
2N3055-ONS

2N3055-ONS

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear...
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
12.19$ VAT incl.
(12.19$ excl. VAT)
12.19$

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Quantity in stock : 51
2N1711

2N1711

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Collector current: 50...
2N1711
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2N1711
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1.25$ VAT incl.
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1.25$
Quantity in stock : 143
2N2211A

2N2211A

Quantity per case: 1. Semiconductor material: GE. FT: 8 MHz. Function: S-L. Max hFE gain: 140. Minim...
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5.93$ VAT incl.
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5.93$
Quantity in stock : 14
2N5416

2N5416

C(in): 75pF. Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Functio...
2N5416
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2N5416
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1.35$ VAT incl.
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1.35$
Quantity in stock : 49
2N2906

2N2906

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Colle...
2N2906
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2N2906
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1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$
Quantity in stock : 4350
1206S4J-039-JT5E

1206S4J-039-JT5E

Resistance: 3.9 Ohms. Power: 0.25W. Dimensions: 3.2x1.6x0.6. RoHS: yes. Assembly/installation: surfa...
1206S4J-039-JT5E
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1206S4J-039-JT5E
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0.0141$ VAT incl.
(0.0141$ excl. VAT)
0.0141$
Quantity in stock : 517
2N2219A

2N2219A

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): 25pF. Cost): 8pF. Quantity per case: ...
2N2219A
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1.12$ VAT incl.
(1.12$ excl. VAT)
1.12$
Quantity in stock : 66
2N2904A

2N2904A

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. ...
2N2904A
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0.62$ VAT incl.
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0.62$
Quantity in stock : 96
1-2176430-0

1-2176430-0

Nominal dissipation [W @ °C]: 35W. Resistance: 3.3 Ohms. RoHS: yes. Component family: Metal Film Re...
1-2176430-0
[LONGDESCRIPTION]
1-2176430-0
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11.46$ VAT incl.
(11.46$ excl. VAT)
11.46$

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