Electronic components and equipment, for businesses and individuals

1N5402

1N5402
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.12$ 0.12$
10 - 24 0.11$ 0.11$
25 - 49 0.10$ 0.10$
50 - 99 0.0982$ 0.0982$
100 - 249 0.0924$ 0.0924$
250 - 499 0.0802$ 0.0802$
500 - 2914 0.0866$ 0.0866$
Quantity U.P
1 - 9 0.12$ 0.12$
10 - 24 0.11$ 0.11$
25 - 49 0.10$ 0.10$
50 - 99 0.0982$ 0.0982$
100 - 249 0.0924$ 0.0924$
250 - 499 0.0802$ 0.0802$
500 - 2914 0.0866$ 0.0866$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2914
Set of 1

1N5402. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Number of terminals: 2. Note: GI. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms. Quantity in stock updated on 04/04/2025, 16:25.

Equivalent products :

Quantity in stock : 9378
1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
1N5408
Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms
1N5408
Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms
Set of 1
0.13$ VAT incl.
(0.13$ excl. VAT)
0.13$
Quantity in stock : 2811
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
Set of 1
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$
Quantity in stock : 3034
1N5406

1N5406

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semicond...
1N5406
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Spec info: IFSM--200Ap t=8.3ms
1N5406
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Spec info: IFSM--200Ap t=8.3ms
Set of 5
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 278
1N5406H

1N5406H

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semicond...
1N5406H
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms
1N5406H
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms
Set of 10
1.25$ VAT incl.
(1.25$ excl. VAT)
1.25$

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1N5408

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Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
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1N4007

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1N4002

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VRRM: 100V. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 5uA..50uA....
1N4002
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BY255

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RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
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Quantity in stock : 2914
1N5402

1N5402

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
1N5402
[LONGDESCRIPTION]
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