1N5406H

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 1	1.25$	1.25$
2 - 2	1.18$	1.18$
3 - 4	1.12$	1.12$
5 - 9	1.06$	1.06$
10 - 24	1.00$	1.00$
25 - 28	0.87$	0.87$

Quantity (Set of 10)	U.P
1 - 1	1.25$	1.25$
2 - 2	1.18$	1.18$
3 - 4	1.12$	1.12$
5 - 9	1.06$	1.06$
10 - 24	1.00$	1.00$
25 - 28	0.87$	0.87$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 278

Set of 10

1N5406H. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Number of terminals: 2. Note: center distance 15mm. Spec info: IFSM--200Ap t=8.3ms. Quantity in stock updated on 24/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!