Transient suppressor Diodes

Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 120V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO15 (3.5x6.5mm). Ubr [V] @ Ibr [A]: 120V @ 1mA. Ubr [V] @ Ibr [A]: 126V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 102V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

Dielectric structure: bidirectional. Semiconductor material: silicon. Breakdown voltage: 120V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO15 (3.5x6.5mm). Number of terminals: 2. Function: transil diode, overvoltage protection

Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 12V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO15 (3.5x6.5mm). Ubr [V] @ Ibr [A]: 12V @ 1mA. Ubr [V] @ Ibr [A]: 12.6V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 10.2V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

Dielectric structure: bidirectional. Semiconductor material: silicon. Breakdown voltage: 12V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 3.5x6.5mm ). Ubr [V] @ Ibr [A]: 12V @ 1mA. Ubr [V] @ Ibr [A]: 12.6V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 10.2V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

Dielectric structure: unidirectional. Breakdown voltage: 13V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO41 3.5x6.5. Number of terminals: 2. Function: transil diode, overvoltage protection

Dielectric structure: bidirectional. Semiconductor material: silicon. IFSM: 100A. Breakdown voltage: 13V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Function: transil diode, overvoltage protection. Spec info: Ifsm 100Ap (t=8.2ms)

Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 150V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Ubr [V] @ Ibr [A]: 150V @ 1mA. Ubr [V] @ Ibr [A]: 158V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 128V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

Close direction holding voltage [V]: 128V. Housing: DO-15. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: bidirectional. Ubr [V] @ Ibr [A]: 143V @ 1mA. Ubr [V] @ Ibr [A]: 150V @ 1mA. Ubr [V] @ Ibr [A]: 158V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 128V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Breakdown voltage: 150V. Power: 600W. Dielectric structure: bidirectional

Close direction holding voltage [V]: 12.8V. Housing: DO-15. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: unidirectional. Ubr [V] @ Ibr [A]: 14.3V @ 1mA. Ubr [V] @ Ibr [A]: 15V @ 1mA. Ubr [V] @ Ibr [A]: 15.8V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 12.8V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Breakdown voltage: 15V. Power: 600W. Dielectric structure: unidirectional

RoHS: yes. Component family: P6KE Series Bi-Directional Suppressor (600W @ 1ms). Housing: PCB soldering. Housing: DO-15. Close direction holding voltage [V]: 12.8V. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: bidirectional. Ubr [V] @ Ibr [A]: 14.3V @ 1mA. Ubr [V] @ Ibr [A]: 15V @ 1mA. Ubr [V] @ Ibr [A]: 15.8V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 12.8V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C

Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 16V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO15 (3.5x6.5mm). Number of terminals: 2. Function: transil diode, overvoltage protection

Dielectric structure: bidirectional. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Note: Suppressor. Function: transil diode, overvoltage protection. Note: transil diode

RoHS: yes. Component family: P6KE Series Unidirectional Suppressor (600W @ 1ms). Housing: PCB soldering. Housing: DO-15. Close direction holding voltage [V]: 154V. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: unidirectional. Ubr [V] @ Ibr [A]: 171V @ 1mA. Ubr [V] @ Ibr [A]: 180V @ 1mA. Ubr [V] @ Ibr [A]: 189V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 154V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: P6KE Series Bi-Directional Suppressor (600W @ 1ms). Housing: PCB soldering. Housing: DO-15. Close direction holding voltage [V]: 154V. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: bidirectional. Ubr [V] @ Ibr [A]: 171V @ 1mA. Ubr [V] @ Ibr [A]: 180V @ 1mA. Ubr [V] @ Ibr [A]: 189V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 154V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C

Dielectric structure: unidirectional. Breakdown voltage: 18V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Ubr [V] @ Ibr [A]: 18V @ 1mA. Ubr [V] @ Ibr [A]: 18.9V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 15.3V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Note: Suppressor. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

RoHS: no. Component family: P6KE Series Bi-Directional Suppressor (600W @ 1ms). Housing: PCB soldering. Housing: DO-15. Close direction holding voltage [V]: 15.3V. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: bidirectional. Ubr [V] @ Ibr [A]: 17.1V @ 1mA. Ubr [V] @ Ibr [A]: 18V @ 1mA. Ubr [V] @ Ibr [A]: 18.9V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 15.3V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C

Dielectric structure: unidirectional. Housing: DO-15. Breakdown voltage: 200V. Power: 600W. Close direction holding voltage [V]: 171V

Dielectric structure: bidirectional. Semiconductor material: silicon. Breakdown voltage: 200V. Pd (Power Dissipation, Max): 5W, max 600W 1ms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Ubr [V] @ Ibr [A]: 210V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 171V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection

Dielectric structure: unidirectional. Semiconductor material: silicon. Pd (Power Dissipation, Max): 5W, max 600W 1ms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Number of terminals: 2. Function: transil diode, overvoltage protection

Dielectric structure: bidirectional. Breakdown voltage: 20V. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Number of terminals: 2. Function: transil diode, overvoltage protection

Dielectric structure: unidirectional. Semiconductor material: silicon. IFSM: 100A. Breakdown voltage: 220V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Quantity per case: 1. Function: transil diode, overvoltage protection. Spec info: Ifsm 100Ap (t=8.2ms)

Dielectric structure: bidirectional. Semiconductor material: silicon. IFSM: 100A. Breakdown voltage: 220V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Function: transil diode, overvoltage protection. Spec info: Ifsm 100Ap (t=8.2ms)

RoHS: no. Component family: P6KE Series Unidirectional Suppressor (600W @ 1ms). Housing: PCB soldering. Housing: DO-15. Close direction holding voltage [V]: 18.8V. Configuration: PCB through-hole mounting. Number of terminals: 2. Transient suppressor type: unidirectional. Ubr [V] @ Ibr [A]: 20.9V @ 1mA. Ubr [V] @ Ibr [A]: 22V @ 1mA. Ubr [V] @ Ibr [A]: 23.1V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 18.8V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C

Breakdown voltage: 22V. Dielectric structure: bidirectional. Housing: DO-15. Pd (Power Dissipation, Max): 5W, max 600W 1ms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Number of terminals: 2. Spec info: Ifsm 100Ap (t=8.2ms). Power: 600W. Close direction holding voltage [V]: 18.8V

Breakdown voltage: 24V. Dielectric structure: unidirectional. Housing: DO-15. Pd (Power Dissipation, Max): 5W, max 600W 1ms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Power: 600W. Close direction holding voltage [V]: 20.5V