Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 120V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO15 (3.5x6.5mm). Ubr [V] @ Ibr [A]: 120V @ 1mA. Ubr [V] @ Ibr [A]: 126V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 102V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection