Dielectric structure: bidirectional. Semiconductor material: silicon. IFSM: 100A. Breakdown voltage: 27V. Pd (Power Dissipation, Max): 5W, max 600W 1ms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -55...+175°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. Number of terminals: 2. Function: transil diode, overvoltage protection. Spec info: Ifsm 100Ap (t=8.2ms). Various: transil diode