Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.0977$ | 0.0977$ |
10 - 24 | 0.0928$ | 0.0928$ |
25 - 49 | 0.0879$ | 0.0879$ |
50 - 99 | 0.0830$ | 0.0830$ |
100 - 249 | 0.0781$ | 0.0781$ |
250 - 499 | 0.0733$ | 0.0733$ |
500 - 7776 | 0.0684$ | 0.0684$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.0977$ | 0.0977$ |
10 - 24 | 0.0928$ | 0.0928$ |
25 - 49 | 0.0879$ | 0.0879$ |
50 - 99 | 0.0830$ | 0.0830$ |
100 - 249 | 0.0781$ | 0.0781$ |
250 - 499 | 0.0733$ | 0.0733$ |
500 - 7776 | 0.0684$ | 0.0684$ |
P6KE12CA. Dielectric structure: bidirectional. Semiconductor material: silicon. Breakdown voltage: 12V. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 3.5x6.5mm ). Ubr [V] @ Ibr [A]: 12V @ 1mA. Ubr [V] @ Ibr [A]: 12.6V @ 1mA. Leakage current on closing Ir [A] @ Uz [V]: 5uA @ 10.2V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 600W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection. Quantity in stock updated on 25/12/2024, 06:25.
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