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Semiconductors Transistors

STP55NE06

STP55NE06
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.89$ 1.89$
5 - 5 1.79$ 1.79$
Quantity U.P
1 - 4 1.89$ 1.89$
5 - 5 1.79$ 1.79$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 5
Set of 1

STP55NE06. C(in): 3050pF. Cost): 380pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 220A. ID (T=100°C): 39A. ID (T=25°C): 55A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P55NE06. Temperature: +175°C. Pd (Power Dissipation, Max): 130W. On-resistance Rds On: 0.019 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: power MOSFET transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 152
STP55NF06

STP55NF06

C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. F...
STP55NF06
C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P55NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STP55NF06
C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P55NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 20 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.36$ VAT incl.
(1.36$ excl. VAT)
1.36$
Quantity in stock : 51
STP65NF06

STP65NF06

C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
STP65NF06
C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P65NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.0115 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
STP65NF06
C(in): 1700pF. Cost): 400pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 70us. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P65NF06. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.0115 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$

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