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Semiconductors Transistors

STP16NF06L

STP16NF06L
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.02$ 1.02$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 71 0.85$ 0.85$
Quantity U.P
1 - 4 1.02$ 1.02$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 71 0.85$ 0.85$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 71
Set of 1

STP16NF06L. C(in): 345pF. Cost): 72pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 64A. ID (T=100°C): 11A. ID (T=25°C): 16A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.08 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 10 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 16V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: Low Gate Charge. G-S Protection: no. Quantity in stock updated on 25/12/2024, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 160
FQPF20N06L

FQPF20N06L

C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : d...
FQPF20N06L
C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Id(imp): 62.8A. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no
FQPF20N06L
C(in): 480pF. Cost): 175pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Id(imp): 62.8A. ID (T=100°C): 11.1A. ID (T=25°C): 15.7A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 30W. On-resistance Rds On: 0.042 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no
Set of 1
2.04$ VAT incl.
(2.04$ excl. VAT)
2.04$

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BTA40-600B

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IRFPC50

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C(in): 2700pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type o...
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IRFBC40

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IXFK90N30

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DAC0808LCN

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2SC2625

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STP6NK60Z

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IRF540

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